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描述
無描述配置
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 代工型號說明
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.文檔
無文檔
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
19003
晶圓尺寸:
8"/200mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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PLASMATHERM
790
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
19003
晶圓尺寸:
8"/200mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 代工型號說明
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.文檔
無文檔