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APPLIED MATERIALS (AMAT) CENTURA TxZ
  • APPLIED MATERIALS (AMAT) CENTURA TxZ
  • APPLIED MATERIALS (AMAT) CENTURA TxZ
  • APPLIED MATERIALS (AMAT) CENTURA TxZ
描述
HEATER
配置
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OEM 代工型號說明
The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.
文檔

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類別
CVD

上次驗證: 超過60天前

關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

106360


晶圓尺寸:

未知


年份:

未知


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APPLIED MATERIALS (AMAT)

CENTURA TxZ

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已驗證
類別
CVD
上次驗證: 超過60天前
listing-photo-3fa554a4b2644d0691dd43c18978e9df-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

106360


晶圓尺寸:

未知


年份:

未知


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
HEATER
配置
無配置
OEM 代工型號說明
The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.
文檔

無文檔