Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

Aluminum Deposition — Aluminum (Al) continues to be the material used by many memory manufacturers for interconnects. The Applied Endura iFill Al CVD CVD/PVD system is used for building high-density interconnects in Flash and DRAM memory chips. This advanced process, for sub-90nm generations, enables customers to replace tungsten structures with aluminum to achieve faster chips with fewer steps and less cost.

APPLIED MATERIALS (AMAT)

ENDURA iFILL Al CVD/PVD

CENTURA I PHASE II ULTIMA

Tungsten Deposition — Tungsten is used in the contact area of a chip that connects the transistors to the wiring circuitry. In aluminum-based devices, tungsten is also used in the structures that connect the multiple layers of aluminum wiring. Applied has two products for depositing tungsten: the Applied Centura Sprint® Tungsten CVD system for 90nm and below devices and the Applied Centura iSprint ALD/CVD system for more advanced applications. The latter product combines ALD technology and CVD chambers on the same platform.


CENTURA iSPRINT W ALD/CVD

The AMS 2100, a self-contained CVD system for volume production ofSiO 2 , PSG or BPSG films. Continuous processing provides high throughput rates; the optimum deposition rate of 1,100 A/minute provides low-stress films with guaranteed uniformities.

AMS 2100

CENTURA 5200 WXZ

Tungsten Deposition - Tungsten is the basic material used to connect the multiple layers of metal wiring on a chip. For many years, Applied has been a leading provider of systems to deposit tungsten and in fiscal 2000, Applied launched a new system, the Sprint™ Tungsten Centura, to fill the tight geometries required in sub-0.18 micron chip designs.

CENTURA SPRINT

The Centura DPN HD (high dose) system consists of decoupled plasma nitridation (DPN) and post-nitridation anneal (PNA) chambers integrated on the Centura mainframe. It offers enhanced nitridation capabilities for both logic and advanced memory applications.

CENTURA ACP DPN HD 

Centura Ultima HDP 200mm and 300mm systems deliver a high-density plasma CVD process. It has been the industry-leading workhorse delivering high-quality dielectric films and void-free gapfill. Its reactor enables customers to achieve the productivity, cost-efficiency, and extendibility needed for multi-generation manufacturing.
The Ultima HDP system features dual RF coils for superior gap-fill capability across the wafer; its innovative electrostatic chuck enables excellent film quality and uniformity; combined with remote plasma clean, it delivers exceptional defect and mean-wafer-between-clean performance.
The product’s advanced technology enables deposition of both undoped and doped films for a wide range of applications, including STI, PMD, ILD, IMD, and passivation. Its versatility further extends to etchback and high-density plasma treatment for improved film quality.

CENTURA ULTIMA TE

The Applied Materials Precision 5000 CVD is a single system solution for depositing high-quality, low-temperature dielectric materials on semiconductor devices. It incorporates multi-step processes to provide enabling technology for void-free intermetal dielectric deposition with profile control. The system’s process flexibility over a wide range of applications reduces the number and types of machines required for CVD. This makes it an efficient and cost-effective solution for semiconductor manufacturing.

P5000 CVD

The Applied Centura Ultima HDP CVD 200mm and 300mm systems deliver a high-density plasma CVD process. It has been the industry-leading workhorse delivering high-quality dielectric films and void-free gapfill. Its reactor enables customers to achieve the productivity, cost-efficiency, and extendibility needed for multi-generation manufacturing.

CENTURA ULTIMA HDP-CVD

The Applied Materials CENTURA HDP (High-Density Plasma) is a semiconductor processing system used for the deposition of high-quality films in advanced semiconductor manufacturing. It is designed to provide precise control over film properties and uniformity, enabling the fabrication of high-performance semiconductor devices.

CENTURA HDP

PRODUCER

AMP 3300 PLASMA DEPOSITION SYSTEMS
Superior film qualities, both nitride and oxide, guaranteed uniformities, and proven reliability have made the AMP 3300 popular for a wide range of plasma passivation and interlayer applications. Recent process developments have led to an improved method of gas distribution employing a perforated electrode. This provides for uniform gas composition across the entire wafer platen, resulting in consistent film characteristics on every wafer.

AMP 3300

IPM is tied to CVD and the Excite is mask wafer particle

The AMAT CENTURA AP ULTIMA X is a high-density plasma chemical vapor deposition (CVD) system designed for semiconductor manufacturing in both 200mm and 300mm configurations. As an industry-leading workhorse, it excels in delivering high-quality dielectric films and void-free gap fill, crucial for advanced chip fabrication. The system's dual RF coils provide superior gap-fill capability across the wafer, while its innovative electrostatic chuck ensures excellent film quality and uniformity. Combined with remote plasma clean technology, it achieves exceptional defect control and improved mean-wafer-between-clean performance. The Ultima HDP system's advanced technology enables deposition of both undoped and doped films, catering to various applications such as shallow trench isolation (STI), pre-metal dielectric (PMD), interlayer dielectric (ILD), inter-metal dielectric (IMD), and passivation. Its versatility also extends to etchback and high-density plasma treatments, enhancing film quality in semiconductor manufacturing processes.

Centura AP Ultima X

RPS Ultima Plus IS a reactor Equipment that operates on HDP CVD System that can process Wafers of 6”. It is enhanced with two Ultima Plus chambers. The main function of the machine is deposition of undoped and doped layers. 

Centura Ultima Plus

The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.
In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.

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