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SSM 495
    描述
    CV MEASUREMENT
    配置
    無配置
    OEM 代工型號說明
    The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.
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    verified-listing-icon

    已驗證

    類別
    Probers

    上次驗證: 超過60天前

    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    87193


    晶圓尺寸:

    未知


    年份:

    1999


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    SSM

    495

    verified-listing-icon
    已驗證
    類別
    Probers
    上次驗證: 超過60天前
    listing-photo-f32b95d0fd0e41b5ba4d951de30f1ae0-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    87193


    晶圓尺寸:

    未知


    年份:

    1999


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    CV MEASUREMENT
    配置
    無配置
    OEM 代工型號說明
    The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.
    文檔

    無文檔