描述
Automatic Mercury Probe CV/IV Measuring Device配置
Wear size MAX200mmOEM 代工型號說明
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.文檔
無文檔
SSM
495
已驗證
類別
Probers
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
59444
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SSM
495
類別
Probers
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
59444
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Automatic Mercury Probe CV/IV Measuring Device配置
Wear size MAX200mmOEM 代工型號說明
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.文檔
無文檔