跳到主要內容
We value your privacy

We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. 閱讀詳情

Moov logo

Moov Icon
APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
  • APPLIED MATERIALS (AMAT) / VARIAN VIISta HCP
描述
High Current Implanter
配置
High Current Implanter
OEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
文檔

無文檔

類別
High Current

上次驗證: 超過60天前

關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

91308


晶圓尺寸:

12"/300mm


年份:

2006


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

APPLIED MATERIALS (AMAT) / VARIAN

VIISta HCP

verified-listing-icon
已驗證
類別
High Current
上次驗證: 超過60天前
listing-photo-429dde98db3c44ba9f097c7a6c6f5e48-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

91308


晶圓尺寸:

12"/300mm


年份:

2006


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
High Current Implanter
配置
High Current Implanter
OEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.
文檔

無文檔