描述
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文檔
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
已驗證
類別
High Current
關鍵商品詳情
條件:
Parts Tool
作業狀態:
Deinstalled
產品編號:
94077
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
已驗證
類別
High Current
上次驗證: 超過60天前
關鍵商品詳情
條件:
Parts Tool
作業狀態:
Deinstalled
產品編號:
94077
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文檔
無文檔