We value your privacy
We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. 閱讀詳情
描述
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文檔
無文檔
類別
High Current
上次驗證: 超過60天前
關鍵商品詳情
條件:
Parts Tool
作業狀態:
Deinstalled
產品編號:
94077
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
類似上架商品
查看全部
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
類別
High Current
上次驗證: 超過60天前
關鍵商品詳情
條件:
Parts Tool
作業狀態:
Deinstalled
產品編號:
94077
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv配置
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 代工型號說明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.文檔
無文檔