November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

The single wafer high current VIISta 80HP for advanced devices and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

APPLIED MATERIALS (AMAT) / VARIAN

VIISta 80HP

The VIISion 80 is a high current ion implanter designed by Varian. It is used for ion implantation, which is a process used in the manufacture of semiconductors to modify the properties of materials by introducing impurities or dopants into the material. The 80 keV VIISion ion implantation system can autotune and implant high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems.

VIISion 80+

The VIISta Trident system is the semiconductor industry’s most advanced single-wafer high-current implanter. The system leverages the VIISta high-current ion implant platform’s production-proven, single-wafer architecture to set new benchmarks for energy contamination, uniformity, and angle and dose rate control to meet advanced node requirements with high yield and the highest productivity

VIISta TRIDENT

The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.

VIISion 200

VIISta 1500H

VIISta 60HC

VIISON 80/200

The VIISta 3000HP is a high-energy ion implanter from Applied Materials (AMAT) / Varian. It offers excellent productivity, uniformity, zero-degree implantation, and optimal process matching capabilities for advanced device technologies.

VIISta 3000HP

VARIAN VIISION 200+ is a high current implanters system. The VIISION 200+ can produce wafer size of 200 mm.

VIISion 200+

160-10

VIISta HC

The Varian 160XP is a high current ion implanter used in semiconductor manufacturing. It was manufactured by Varian in 1991 and operates on a voltage of 208 volts with a phase of 3+1. It is part of the XP series of ion implant systems by Varian.

160XP

The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.

VIISta PLAD

The Varian 120XP High Current Ion Implanter it can handle wafer sizes of 100mm, 125mm, and 150mm. It is optimized for maximum dose uniformity and repeatability, has reduced particulate contamination, and is a production-proven solution with the industry’s lowest cost of ownership (CoO) and high throughput.

120XP

The Varian E1000 is a high current implanter that leverages Varian’s pioneering single-wafer high current technology to deliver high yields and the industry’s best productivity. Innovations on the dual-magnet ribbon beam architecture improve beam line transmission, on-wafer beam utilization, and beam current output.

E1000

The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.

VIISta HCP

The Varian 180XP is designed to deliver high-current ion beams for ion implantation processes. It offers precise control over ion beam characteristics, such as energy, dose, and angle of incidence, to enable the creation of precise dopant profiles in the semiconductor material.

180XP

The VIISion 80 ion implanter beam line incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.

VIISion 80

The Varian E1000HP is an advanced ion implanter and monitor system. It offers a high-efficiency electrostatic accelerator, precise beam voltage control, multiple beam current and dose ranges, and sophisticated diagnostic and analysis tools for precise and consistent implantation.

E1000HP

KESTREL

The Kestrel 750 is a high energy ion implanter that is the industry’s most cost-effective MeV implanter. It operates in the range of 10 - 3750 keV. Varian offers device makers the lowest cost, most practical MeV production solution with its Kestrel high energy implanter. Kestrel has distinct advantages in cost of ownership with its compact design, unique DC Tandetron accelerator, and large implant chamber. The simplicity of the Kestrel design sets this system apart from other MeV implanters and makes it the tool of choice for production MeV implants.

KESTREL 750

VIISta HCS

The high current VIISta 80HP and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

VIISta 80

The high-energy VIISta 3000HP and VIISta 3000 ion implanters have outstanding process accuracy for advanced device technologies, offering excellent productivity, uniformity, zero degree implantation and optimal process matching capabilities. The VIISta 3000 series products are the only high energy (“MeV”) implanters available on the market offering true zero capability needed in charged coupled devices (“CCD”) and other high performance devices. The high energy products cover retrograde well, triple well, buried layers, and pocket applications. Varian Semiconductor’s other high-energy tool is the Kestrel II-750 ion implanter.

VIISta 3000

The Kestrel 750 II is a high current ion implanter manufactured by Varian. It is used for semiconductor processing and can process wafers of size 8”.

6" Fab For Sale from Moov - Click Here to Learn More

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6" Fab For Sale from Moov - Click Here to Learn More

APPLIED MATERIALS (AMAT) / VARIAN

概述

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服務

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VIISta 80HP

VIISion 80+

VIISta TRIDENT

VIISion 200

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