ONTO / NANOMETRICS / ACCENT / BIO-RAD

QS230

he DL8000 is a digital Deep Level Transient Spectrometer that is controlled by a PC and software. It uses Fourier transformation to investigate deep level characteristics by digitizing capacitance-time transients produced by deep level emission. The system is designed to inspire confidence in the measurement parameters, transient time law, and data quality. It features automatic control of experimental parameters, evaluation of impurity concentration, activation energy, and capture cross section, as well as high measurement accuracy. The hardware is completely controlled through the software, allowing for custom set-up procedures and simplified operation through User Access Codes. Cryostat options include a liquid nitrogen cryostat or a closed cycle helium cryostat. The signal-to-noise ratio is optimized through adjustable sampling period width, automatic capacitance compensation, variable cut-off frequency, and automatic gain ranging. High frequency C-V measurement and I-V characteristics are also included in the sample set-up routine.

DL8000

Q200I 

The QS-600 is a new addition to the QS series of FT-IR based instruments, designed specifically for use by silicon producers. It is capable of measuring normal oxygen and carbon levels, as well as oxygen and carbon impurities in silicon substrates using PPB (p-polarized Brewster) angle measurement. The system features high-performance optics, precise and accurate measurements, and automatic computer-selectable reflection and transmission modes. The robotic wafer handler is compact, clean room compatible, and can handle 100mm - 200mm wafers or up to 2mm thick silicon slices. The X-Y stage allows for unlimited user-defined mapping patterns and contour maps to be generated. Overall, the QS-600 is a powerful tool for semiconductor analysis.

QS-600

The QS-312 system is a state-of-the-art bench top FT-IR system designed for semiconductor material analysis of 300mm wafers and slugs. It is the latest version of the successful field-proven model QS-300 technology, with the added capability of handling 300mm material. The system can handle standard wafers as well as 2mm slugs in the diameter range of 3 to 300mm, making it a versatile and powerful tool for semiconductor material analysis.

QS-312

QS4300

The QS-500 is a state-of-the-art FT-IR instrument designed for non-destructive analysis of semiconductor wafers. It is fully automated and ideal for use in both Fabs and R&D facilities. The high-performance optics provide maximum throughput, ensuring precise and accurate measurements. The instrument also features automatic computer selectable reflection and transmission modes. The robotic wafer handler, with an integrated pre-aligner, provides a compact footprint and the ability to sort using two cassette stations. Additionally, the system incorporates an X-Y stage, allowing for unlimited user-defined mapping patterns on samples and the generation of contour maps. Overall, the QS-500 is a powerful tool for semiconductor wafer analysis.

QS-500

Dopant concentration and layer thickness, with faster wafer handling.

STRATUS

Vertical alignment of device structures extendible to 90 nanometers on 200mm wafers.

Q200

Illumina is a compact manual FT-IR system that belongs to a new class of innovative instruments for optical, non-contact measurements of epi wafers. With over 25 years of experience, it provides accurate and repeatable characterization of multi-layer, compound semiconductor wafer parameters such as epi thickness and doping concentration. This critically affects the performance of optoelectronic devices such as P-I-N and avalanche photodiodes, IR lasers, VCSELs, LEDs, and waveguides, allowing for higher yields and lower costs. Using state-of-the-art Fourier Transform Infrared technology and model-based analysis, epi thickness maps can be obtained in minutes on both test and product wafers. An optional small spot size minimizes edge exclusion.

ILLUMINA

QSFRS, or the Full Rod Oxygen Analyzer, is an automatic ingot scanning FT-IR spectrometer system designed to determine impurities in bulk silicon in crystal growing areas. It is capable of determining interstitial oxygen impurities in bulk silicon ingots and includes the ability to calibrate, correct, and monitor daily analysis using SPC control standards. QSFRS has an optional built-in stage for smaller pieces and a mobile cart for sampling whole rods. It also has built-in safety interlocks and signal lights to meet production environment safety requirements. This system is a valuable tool for ensuring the purity of silicon ingots in the crystal growing process.

QSFRS

The QS1200 is a desktop FTIR metrology tool designed for advanced semiconductor fabs. It is used for dopant monitoring, epi thickness measurement, and other applications. The tool can accommodate SEMI standard wafers of 100, 125, 150, 200, and 300mm diameter, as well as odd shaped wafer pieces and 2mm thick silicon slices. An optional single wafer mapping stage is available for all wafer sizes. The QS1200 also features unique algorithms for instant qualification of SOI, SiC, and other epitaxial films. Its built-in intelligence extends its applicability to almost every film material imaginable. Additionally, it is versatile enough to qualify the thickness of recycled test wafers for rapid payback. This tool provides a new level of integration of the FTIR technique utilizing proven optical technology.

QS1200

The QS-300 is a bench top FT-IR system designed for the analysis of semiconductor material in Fabs and R&D facilities. It features high performance optics with maximum optical throughput, providing precise and accurate measurements in both reflection and transmission modes. The system also has an innovative sample compartment that can accommodate single wafers or slugs of 3 to 200mm, as well as non-standard shape and size silicon substrates. This makes it a versatile tool for analyzing a wide range of semiconductor materials.

QS-300

The QS2200 is a 200mm FTIR metrology tool designed for non-destructive wafer analysis. It is used for the characterization and measurement of semiconductor materials and device manufacturing. The QS2200 model is available in two configurations: the QS2200A, an automated system with two open cassette stations, and the QS2200ME, an automated system with an indexer and open cassette system. The QS2200 series incorporates a universal stage that adjusts automatically to different wafer sizes (100, 125, 150, and 200mm) and unique algorithms that deliver instant qualification of SOI, SiC, and other epitaxial films. Additionally, it is versatile enough to qualify the thickness of recycled test wafers for rapid payback. This tool is built with intelligence that extends its applicability to almost every film material imaginable.

QS-2200

QS2200A

The QS-408M is a manual wafer loading FT-IR system designed for semiconductor material characterization. It incorporates an X-Y stage that allows for unlimited user-defined mapping patterns and contour maps to be generated. The system can accommodate single wafers or slugs of 3" to 200mm, as well as non-standard shape and size silicon substrates. The QS-408M software has communication capability to host computers under the SECS I and II protocols. This makes it a versatile and powerful tool for semiconductor material analysis.

QS-408M

The QS2200 and QS3300 are Fourier-Transform Infra-Red spectrometers designed for non-destructive wafer analysis. These systems are used for the characterization and measurement of semiconductor substrates as well as in device manufacturing. The QS3300 is a production version which supports high-volume 300mm manufacturing for various applications: boron and phosphorus concentration in BPSG films, atomic hydrogen concentrations in silicon nitride passivation layers, fluorine in FSG films, epitaxial thickness, concentrations of interstitial oxygen and substitutional carbon in silicon.

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