描述
無描述配置
Wafer Size (inches) - 6 Wafer Type - flat Install Type - stand alone Is System On-Line? - YES CE Mark Certified? - YES Clean Room Manuals - NO Standard Manuals - YES OEM Audit Available? - NO Decontamination Report Exists? - YES Can Produce Wafers AS IS? - YES Any Known Field Modifications? - YES All Cables Present? - YES Frame Type - C1-150 Process Types - SiO2, SiN, Nitride Chamber Type - Dielectric Directory of Chamber Types for Box 3 - Process Tungsten - Tungsten Dep. Dielectric - SiO2, SiN, Nitride Signal Lamp Tower - YES Computer Type - Y2K Pentium Computer W/4.433 SW Robot Type - Single arm C1 Cassette Platform - 150mm Front Monitor - LCD Side Monitor - LCD Integrated SMIF - NO SECS / GEMS - YES Micro Contamination Option - YES Process Type - Dielectric Heater Block P/N - Pinned, scribed (CPS) Shower Head P/N - OEM Shower heads Digital Dynamics IOC - NO Heated Valves - YES Gate Valve Mfg & Model - VAT (CPS upgrade) Throttle Valve - VAT RF Match Type - TRAZAR HF RF Generator - RFG3000 LF RF Generator - PDX1400 Sigma 6 TEOS Cabinet - NO Duraflo Cabinet - NO End Point Detector - NO Manufacturer - Edwards Included With System - YES Gas Box Part Number - 11 Channel Gas Box Number of Channels - 8-Channel / 11-Channel Gas Line # Gas Flow (SLM) MFC Model 1 N2 5 1660 2 SiH4 1 1660 3 SiH4 2% 2 1660 4 PH3 2 1660 5 N2O 20 1660 6 NH3 5 1660 7 C2F6 2 1660 8 O2 20 1660 9 1660 10 1660 11 1660 *gasses not in a specific orderOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
無文檔
類別
PECVD
上次驗證: 今日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
150810
晶圓尺寸:
6"/150mm
年份:
2015
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
類別
PECVD
上次驗證: 今日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
150810
晶圓尺寸:
6"/150mm
年份:
2015
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Wafer Size (inches) - 6 Wafer Type - flat Install Type - stand alone Is System On-Line? - YES CE Mark Certified? - YES Clean Room Manuals - NO Standard Manuals - YES OEM Audit Available? - NO Decontamination Report Exists? - YES Can Produce Wafers AS IS? - YES Any Known Field Modifications? - YES All Cables Present? - YES Frame Type - C1-150 Process Types - SiO2, SiN, Nitride Chamber Type - Dielectric Directory of Chamber Types for Box 3 - Process Tungsten - Tungsten Dep. Dielectric - SiO2, SiN, Nitride Signal Lamp Tower - YES Computer Type - Y2K Pentium Computer W/4.433 SW Robot Type - Single arm C1 Cassette Platform - 150mm Front Monitor - LCD Side Monitor - LCD Integrated SMIF - NO SECS / GEMS - YES Micro Contamination Option - YES Process Type - Dielectric Heater Block P/N - Pinned, scribed (CPS) Shower Head P/N - OEM Shower heads Digital Dynamics IOC - NO Heated Valves - YES Gate Valve Mfg & Model - VAT (CPS upgrade) Throttle Valve - VAT RF Match Type - TRAZAR HF RF Generator - RFG3000 LF RF Generator - PDX1400 Sigma 6 TEOS Cabinet - NO Duraflo Cabinet - NO End Point Detector - NO Manufacturer - Edwards Included With System - YES Gas Box Part Number - 11 Channel Gas Box Number of Channels - 8-Channel / 11-Channel Gas Line # Gas Flow (SLM) MFC Model 1 N2 5 1660 2 SiH4 1 1660 3 SiH4 2% 2 1660 4 PH3 2 1660 5 N2O 20 1660 6 NH3 5 1660 7 C2F6 2 1660 8 O2 20 1660 9 1660 10 1660 11 1660 *gasses not in a specific orderOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
無文檔