描述
PECVD Silane配置
Electrical Requirements - 208 3P 79Amp Wafer Size (inches) - 6 Wafer Type - Flat Install Type - Stand Alone Software Version - 4.433 Is System On-Line? - Yes CE Mark Certified? - Yes Clean Room Manuals - No Standard Manuals - Yes Decontamination Report Exists? - Yes Can Produce Wafers AS IS? - Yes All Cables Present? - Yes Frame Type - Chamber Type C1-150 - Dielectric Directory of Chamber Types for Box 3- Process Dielectric - SiO2, SiN, Nitride, TEOS Signal Lamp Tower - Yes Computer Type - Y2K Pentium Computer W/4.433 SW Robot Type - Single arm C1 Cassette Platform - 150mm Front Monitor - LCD Side Monitor - LCD Integrated SMIF - YES SECS / GEMS - YES Micro Contamination Option - YES Process Type - Dielectric Heater Block P/N - Pinned, scribed (CPS) Shower Head P/N - OEM Shower heads, 8 stations Digital Dynamics IOC - No Heated Valves - yes Gate Valve Mfg & Model - VAT Throttle Valve - VAT RF Match Type - Trazar HF RF Generator - RFG3000 LF RF Generator - PDX1400 Sigma 6 TEOS Cabinet - No Duraflo Cabinet - No End Point Detector - Yes Included With System- Yes Manufacturer - Edwards Included With System - Yes Gas Box Part Number Number of Channels - 8Channel Gas Line #/Gas/Flow (sccm)/MFC Mfgr./MFC Model 1/N2/5//1660 2/SiH4/1//1660 3/2% SiH4/2//1660 4/PH3/2//1660 5/N2O/20//1660 6/NH3/5//1660 7/C2F6/2//1660 8/O2/20//1660 9////1660 10////1660 11////1660 *gases not in a specific orderOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
無文檔
類別
PECVD
上次驗證: 今日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
150811
晶圓尺寸:
6"/150mm
年份:
2019
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
類別
PECVD
上次驗證: 今日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
150811
晶圓尺寸:
6"/150mm
年份:
2019
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
PECVD Silane配置
Electrical Requirements - 208 3P 79Amp Wafer Size (inches) - 6 Wafer Type - Flat Install Type - Stand Alone Software Version - 4.433 Is System On-Line? - Yes CE Mark Certified? - Yes Clean Room Manuals - No Standard Manuals - Yes Decontamination Report Exists? - Yes Can Produce Wafers AS IS? - Yes All Cables Present? - Yes Frame Type - Chamber Type C1-150 - Dielectric Directory of Chamber Types for Box 3- Process Dielectric - SiO2, SiN, Nitride, TEOS Signal Lamp Tower - Yes Computer Type - Y2K Pentium Computer W/4.433 SW Robot Type - Single arm C1 Cassette Platform - 150mm Front Monitor - LCD Side Monitor - LCD Integrated SMIF - YES SECS / GEMS - YES Micro Contamination Option - YES Process Type - Dielectric Heater Block P/N - Pinned, scribed (CPS) Shower Head P/N - OEM Shower heads, 8 stations Digital Dynamics IOC - No Heated Valves - yes Gate Valve Mfg & Model - VAT Throttle Valve - VAT RF Match Type - Trazar HF RF Generator - RFG3000 LF RF Generator - PDX1400 Sigma 6 TEOS Cabinet - No Duraflo Cabinet - No End Point Detector - Yes Included With System- Yes Manufacturer - Edwards Included With System - Yes Gas Box Part Number Number of Channels - 8Channel Gas Line #/Gas/Flow (sccm)/MFC Mfgr./MFC Model 1/N2/5//1660 2/SiH4/1//1660 3/2% SiH4/2//1660 4/PH3/2//1660 5/N2O/20//1660 6/NH3/5//1660 7/C2F6/2//1660 8/O2/20//1660 9////1660 10////1660 11////1660 *gases not in a specific orderOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
無文檔