描述
System with EFEM配置
GaN MOCVDOEM 代工型號說明
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.文檔
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VEECO
Propel
類別
MOCVD
上次驗證: 14 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
146156
晶圓尺寸:
12"/300mm
年份:
2020
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
System with EFEM配置
GaN MOCVDOEM 代工型號說明
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.文檔
無文檔