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描述
無描述配置
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 代工型號說明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文檔
無文檔
類別
MOCVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
99356
晶圓尺寸:
未知
年份:
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX 2800 G4 HT
類別
MOCVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
99356
晶圓尺寸:
未知
年份:
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 代工型號說明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文檔
無文檔