描述
High Energy Implanter配置
無配置OEM 代工型號說明
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.文檔
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SEN CORPORATION / SUMITOMO
NV GSD HE3
已驗證
類別
High Energy
上次驗證: 7 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
94625
晶圓尺寸:
12"/300mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HE3
類別
High Energy
上次驗證: 7 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
94625
晶圓尺寸:
12"/300mm
年份:
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
High Energy Implanter配置
無配置OEM 代工型號說明
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.文檔
無文檔