描述
無描述配置
無配置OEM 代工型號說明
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.文檔
無文檔
類別
High Current
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
136424
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISion 200
類別
High Current
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
136424
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
無配置OEM 代工型號說明
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.文檔
無文檔