描述
PlasmaTherm Versaline DSE-III Deep Silicon Etcher Single chamber with single wafer semi-auto load lock Operational, GUI PC and CTC PC in e-rack are not working. Low Maintenance Package Through-wall panel is not included配置
Main specification (ask for details): - Application: deep silicon etch - Substrate size: 4”,6”,8”. Mechanical clamp -40C..+40C with Affinity chiller - Semi-auto load lock, single wafer - Plasma-Therm ICP-II DSE 3-turn source - 3.5kW, 2MHz ICP RF package (5kW limited to 3.5kW) - High-Speed Process Modulation w/ 1-100kHz DBS RF package for DSE - Heated chamber 180C - Optical End Point Detection - Gas box with 4 lines (C4F8, SF6, Ar, O2. 400/600/50/50sccm) - Fast gas switching option for DSE - User terminal mobile cart - Edwards ih80 dry pump - Edwards xds35i load lock dry pump - Edwards 1300l/s STPA turbo - 380VAC 3 phase (with transformer) - Low Maintenance Package - Through-wall panel is not includedOEM 代工型號說明
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."文檔
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PLASMATHERM
VERSALINE ICP
已驗證
類別
Dry / Plasma Etch
上次驗證: 昨日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
115315
晶圓尺寸:
4"/100mm, 6"/150mm, 8"/200mm
年份:
2012
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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PLASMATHERM
VERSALINE ICP
類別
Dry / Plasma Etch
上次驗證: 昨日
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
115315
晶圓尺寸:
4"/100mm, 6"/150mm, 8"/200mm
年份:
2012
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
PlasmaTherm Versaline DSE-III Deep Silicon Etcher Single chamber with single wafer semi-auto load lock Operational, GUI PC and CTC PC in e-rack are not working. Low Maintenance Package Through-wall panel is not included配置
Main specification (ask for details): - Application: deep silicon etch - Substrate size: 4”,6”,8”. Mechanical clamp -40C..+40C with Affinity chiller - Semi-auto load lock, single wafer - Plasma-Therm ICP-II DSE 3-turn source - 3.5kW, 2MHz ICP RF package (5kW limited to 3.5kW) - High-Speed Process Modulation w/ 1-100kHz DBS RF package for DSE - Heated chamber 180C - Optical End Point Detection - Gas box with 4 lines (C4F8, SF6, Ar, O2. 400/600/50/50sccm) - Fast gas switching option for DSE - User terminal mobile cart - Edwards ih80 dry pump - Edwards xds35i load lock dry pump - Edwards 1300l/s STPA turbo - 380VAC 3 phase (with transformer) - Low Maintenance Package - Through-wall panel is not includedOEM 代工型號說明
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."文檔
無文檔