描述

Plasma Asher Requires HW interlocks against H2 Requires HW interlock removal for lines previously with NF3

配置

5CH + 2 cooling chambers Five Asher / Etch chambers -Two Cooling chambers -Integrated transfer modules -Mini-Environment Wafer Loading Module (EFEM) -The system is configured for Copper processing and has been used for Copper process. Process Modules 7 chamber tool = Five (5) Ashing Units - HS-9050 Ashing Unit Items: - Lambda Source Unit - Capacitance Manometer (722B11TCD2FA) DG1 - RF Power Supply(AXG-5000II-27M-KE) - Multiwavelength EPD 0.1s sampling (Spectrometer) - MFC Configuration for Ashing Unit - MFC#N N2 Max Flow 20 L/min (SEC-Z522MG XN) - MFC#1(*) O02 MaxFlow20L/min (SEC-Z522MGXN) - MFC#2 Ar Max Flow 20 L/min (SEC-Z522MG XN) - MFC#3 H2 Max Flow 5 L/min (SEC-Z512MG x) - MFC#4 N2 Max Flow 20 L/min (SEC-Z522MG XN) - MFC#5(*) CF4 Max Flow 1 L/min (SEC-Z512MG xX) - MFC#6 (**) CO2 Max Flow0.4L/min (SEC-Z512MGX) - MFC#7 He Max Flow 20 L/min (SEC-Z522MG XN) - MFC#S8: Without gasline, without MFC - MFC#9: Without gasline, without MFC - MFC#10: Without gasline, without MFC Process Modules - Two (2) Cooling Units - Cooling Unit Items: - Capacitance Manometer (722B11TCD2FA) DG1 - MFC Configuration for Cooling Unit A - MFC#I N2 Max Flow 20 L/min (SEC-Z522MGXN) - MFC#2 Without gasline, without MFC - MFC#3 Without gasline, without MFC - MFC#4 He Max Flow 10 L/min (SEC-Z512MGX)

OEM 代工型號說明

HS-9050 is equipped with a gas system compatible with both organic and inorganic films. Processing can be flexibly set based on the structure of the film layers, enabling the entire removal process of multilayer resists in next-generation devices to be performed within the same chamber. Meanwhile, helical downflow plasma has been newly adopted as the plasma source, resulting in a highly efficient, less damaging process.