描述
WCVD (Chemical Vapor Deposition)配置
無配置OEM 代工型號說明
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.文檔
無文檔
類別
CVD
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
135689
晶圓尺寸:
12"/300mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH / NOVELLUS
ALTUS MAX ICEFill
類別
CVD
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
135689
晶圓尺寸:
12"/300mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
WCVD (Chemical Vapor Deposition)配置
無配置OEM 代工型號說明
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.文檔
無文檔