描述
Atmospheric Depo LD: 3ea, no modification, CVD配置
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEM 代工型號說明
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.文檔
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AVIZA / WATKINS-JOHNSON
WJ-999R
已驗證
類別
CVD
上次驗證: 3 天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
105238
晶圓尺寸:
8"/200mm
年份:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AVIZA / WATKINS-JOHNSON
WJ-999R
類別
CVD
上次驗證: 3 天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
105238
晶圓尺寸:
8"/200mm
年份:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Atmospheric Depo LD: 3ea, no modification, CVD配置
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEM 代工型號說明
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.文檔
無文檔