描述
*.Installed in a clean room and can demonstrate any time.配置
*.Measurement -Speed: 5 sec. for 150mm wafer. -Range: 2x10E7 ~ 4x10E7 dyne/cm2 -RMS Noise: 0.0001 mE-1(radius=10,000 meters) -Resolution:0.00003mE-1(33 kilometers) -Min scan setp: 0.02mm -Max Points Per Scan: 1250 -Min Radius: 2.0m(for 80mm scan length) -Temperature Range: room temperature ~ 500 C *.Light Source: 670nm(3mW), 750nm(3mW) Laser. *.Dimension: 46cm(18")x46cm(18")x56cm(22") plus computer. *.Weight: 45.5Kg *.Utility -Operation temperature: 18~22 C(64~72F) -Gas Connection: Cooling gas(Nitrogen, Class 100 Air) -Power: 115V, 11A, 50/60Hz -Computer: Pentium 200Mhz,32MB RAM, 3GB HDD, 17" LCD Monitor.OEM 代工型號說明
The Tencor FLX-2320 is an equipment that accurately measures film stress at temperatures from -65°C to 500°C, using dual wavelength technology to work on all types of films, including transparent ones like silicon nitride. This helps better understand film properties in simulated process environments.文檔
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KLA
FLX 2320
類別
Thin Film / Film Thickness
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
66000
晶圓尺寸:
6"/150mm
年份:
1993
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描述
*.Installed in a clean room and can demonstrate any time.配置
*.Measurement -Speed: 5 sec. for 150mm wafer. -Range: 2x10E7 ~ 4x10E7 dyne/cm2 -RMS Noise: 0.0001 mE-1(radius=10,000 meters) -Resolution:0.00003mE-1(33 kilometers) -Min scan setp: 0.02mm -Max Points Per Scan: 1250 -Min Radius: 2.0m(for 80mm scan length) -Temperature Range: room temperature ~ 500 C *.Light Source: 670nm(3mW), 750nm(3mW) Laser. *.Dimension: 46cm(18")x46cm(18")x56cm(22") plus computer. *.Weight: 45.5Kg *.Utility -Operation temperature: 18~22 C(64~72F) -Gas Connection: Cooling gas(Nitrogen, Class 100 Air) -Power: 115V, 11A, 50/60Hz -Computer: Pentium 200Mhz,32MB RAM, 3GB HDD, 17" LCD Monitor.OEM 代工型號說明
The Tencor FLX-2320 is an equipment that accurately measures film stress at temperatures from -65°C to 500°C, using dual wavelength technology to work on all types of films, including transparent ones like silicon nitride. This helps better understand film properties in simulated process environments.文檔
無文檔