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描述
Handler System Standard Automation / Software (1) OK Factory Interface FOUP (2) OK Options System 10ms Long Pulse Capability (1) OK Options System Interface A (1) OK Options System Software Emulator (1) OK配置
MILLIOS HVMOEM 代工型號說明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文檔
無文檔
MATTSON
MILLIOS
類別
RTP/RTA
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
82196
晶圓尺寸:
12"/300mm
年份:
2012
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Refurbishment Services
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描述
Handler System Standard Automation / Software (1) OK Factory Interface FOUP (2) OK Options System 10ms Long Pulse Capability (1) OK Options System Interface A (1) OK Options System Software Emulator (1) OK配置
MILLIOS HVMOEM 代工型號說明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文檔
無文檔