描述
無描述配置
RTPOEM 代工型號說明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文檔
無文檔
MATTSON
MILLIOS
已驗證
類別
RTP/RTA
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
116708
晶圓尺寸:
12"/300mm
年份:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MATTSON
MILLIOS
類別
RTP/RTA
上次驗證: 超過30天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
116708
晶圓尺寸:
12"/300mm
年份:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
RTPOEM 代工型號說明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.文檔
無文檔