描述
There are some missing parts that cannot be used normally. Missing Parts: PM1: MMC qty 1 PM2: MMC qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1配置
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during the shutdownOEM 代工型號說明
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.文檔
無文檔
MATTSON
HELIOS
已驗證
類別
RTP/RTA
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
75593
晶圓尺寸:
12"/300mm
年份:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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MATTSON
HELIOS
類別
RTP/RTA
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
75593
晶圓尺寸:
12"/300mm
年份:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
There are some missing parts that cannot be used normally. Missing Parts: PM1: MMC qty 1 PM2: MMC qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1配置
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during the shutdownOEM 代工型號說明
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.文檔
無文檔