概述

The 3000 RTP system is the advanced generation RTP tool available with dual side heating to minimize pattern induced thermal non-uniformity and to achieve fast ramp rates of up to 250(degrees)C per second. The 3000 RTP system can be configured for both 200 mm and 300 mm wafers and its applications include ultra-shallow junction formation, implant annealing, cobalt silicide formation and oxinitride formation.