
描述
Wafer sizes: Small pieces, 2″, 3″, 4″, 5″, 6″, 8″ wafer capability Recommended ramp up rate: Programmable, 10°C to 120°C per second. Maximum Rate: 200°C (NOT RECOMMENDED) Recommended steady state duration: 0-300 seconds per step. Ramp down rate: Non-programmable, 10°C to 200°C per second. Recommended steady state temperature range: 150°C – 1150°C. Maximum 1250°C (NOT RECOMMENDED) ERP Pyrometer 450-1250°C with ±1°C accuracy when calibrated against an instrumented thermocouple wafer. Thermocouple 100-800°C with ±0.5°C accuracy & rapid response. Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.) Temperature uniformity: ±8°C across an 8″ (200 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicide process, no more than 6% increase in non-uniformity during the first anneal at 650°C to 700°C. Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas, NH3, N2O2 are used.配置
Quartz tray for 8inch x 8 inch now. Optional for 5-8 inch round wafer ERP Pyrometer for 450-1250C Gases: N2 and O2. AccuThermo AW 810M Main Frame with wires. Power Type: Three Phase, worldwide power (50/60 Hz) CE Mark if Necessary Pentium® class computer with a 17-inch LCD monitor and Allwin21 Corp proprietary software package. Mouse and standard keyboard. Aluminum oven chamber with water cooling passages and gold plating plates. Door plate with one TC connection port. Isolated Quartz Tube W/O Pyrometer window or with Pyrometer Window. Oven control board and one main control board. Bottom and top heating with 27 (1.2KW ea) Radiation heating lamp module with 4 bank zones (Top Front&Rear, Bottom Front&Rear). Quartz Tray for 5 to 8 inch round wafer or customized. Gas line with one Gas MFC with shut-off valve T-Shape Quartz with qualified K-Type TC and one set holder for 100-800°C temperature measurement. Package of 5 pieces of thermocouple wires as spare TC. USB with original Software backupOEM 代工型號說明
未提供文檔
無文檔
類別
RTP/RTA
上次驗證: 5 天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
138661
晶圓尺寸:
2"/50mm, 3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
年份:
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
ALLWIN21 / AG ASSOCIATES
AccuThermo AW810M
類別
RTP/RTA
上次驗證: 5 天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
138661
晶圓尺寸:
2"/50mm, 3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
年份:
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Wafer sizes: Small pieces, 2″, 3″, 4″, 5″, 6″, 8″ wafer capability Recommended ramp up rate: Programmable, 10°C to 120°C per second. Maximum Rate: 200°C (NOT RECOMMENDED) Recommended steady state duration: 0-300 seconds per step. Ramp down rate: Non-programmable, 10°C to 200°C per second. Recommended steady state temperature range: 150°C – 1150°C. Maximum 1250°C (NOT RECOMMENDED) ERP Pyrometer 450-1250°C with ±1°C accuracy when calibrated against an instrumented thermocouple wafer. Thermocouple 100-800°C with ±0.5°C accuracy & rapid response. Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.) Temperature uniformity: ±8°C across an 8″ (200 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicide process, no more than 6% increase in non-uniformity during the first anneal at 650°C to 700°C. Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas, NH3, N2O2 are used.配置
Quartz tray for 8inch x 8 inch now. Optional for 5-8 inch round wafer ERP Pyrometer for 450-1250C Gases: N2 and O2. AccuThermo AW 810M Main Frame with wires. Power Type: Three Phase, worldwide power (50/60 Hz) CE Mark if Necessary Pentium® class computer with a 17-inch LCD monitor and Allwin21 Corp proprietary software package. Mouse and standard keyboard. Aluminum oven chamber with water cooling passages and gold plating plates. Door plate with one TC connection port. Isolated Quartz Tube W/O Pyrometer window or with Pyrometer Window. Oven control board and one main control board. Bottom and top heating with 27 (1.2KW ea) Radiation heating lamp module with 4 bank zones (Top Front&Rear, Bottom Front&Rear). Quartz Tray for 5 to 8 inch round wafer or customized. Gas line with one Gas MFC with shut-off valve T-Shape Quartz with qualified K-Type TC and one set holder for 100-800°C temperature measurement. Package of 5 pieces of thermocouple wires as spare TC. USB with original Software backupOEM 代工型號說明
未提供文檔
無文檔