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APPLIED MATERIALS (AMAT) P5000 ETCH
    描述
    P5000 Mxp+ 2 poly 1 oxide
    配置
    Used , As-is
    OEM 代工型號說明
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
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    APPLIED MATERIALS (AMAT)

    P5000 ETCH

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    已驗證

    類別

    RIE
    上次驗證: 超過30天前
    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    99002


    晶圓尺寸:

    6"/150mm


    年份:

    1997

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    Money Back Guarantee
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    Transaction Insured by Moov
    Available
    Refurbishment Services
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    類似上架商品
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    APPLIED MATERIALS (AMAT) P5000 ETCH
    APPLIED MATERIALS (AMAT)P5000 ETCHRIE
    年份: 1992條件: 二手
    上次驗證今日

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon

    已驗證

    類別

    RIE
    上次驗證: 超過30天前
    listing-photo-20e052209c754ac299df8ded6e5066da-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    99002


    晶圓尺寸:

    6"/150mm


    年份:

    1997


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    P5000 Mxp+ 2 poly 1 oxide
    配置
    Used , As-is
    OEM 代工型號說明
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    文檔

    無文檔

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