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LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
  • LAM RESEARCH / NOVELLUS INOVA NExT
描述
TFM_TiN-HM Dep
配置
無配置
OEM 代工型號說明
The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
文檔

無文檔

類別
PVD / Sputtering

上次驗證: 超過60天前

關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

113009


晶圓尺寸:

12"/300mm


年份:

2013


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

LAM RESEARCH / NOVELLUS

INOVA NExT

verified-listing-icon
已驗證
類別
PVD / Sputtering
上次驗證: 超過60天前
listing-photo-e3e7f29b0d1d4b45abb60123fac49f6d-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

113009


晶圓尺寸:

12"/300mm


年份:

2013


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
TFM_TiN-HM Dep
配置
無配置
OEM 代工型號說明
The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
文檔

無文檔