概述

Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.