描述
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%配置
無配置OEM 代工型號說明
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor文檔
無文檔
UNAXIS
790
類別
PECVD
上次驗證: 2 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
138844
晶圓尺寸:
3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm
年份:
2002
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%配置
無配置OEM 代工型號說明
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor文檔
無文檔