描述
Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher RIE Reactive Ion Etcher Supports wafer sizes up to 300mm (330mm Platen) RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C Load Lock with turbo pump End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 6 lines including following MFCs: Ar – 100sccm CL – 100sccm BCL3 – 100sccm N2O – 100sccm Windows PC, User friendly interface Chiller, Pump are not included.配置
無配置OEM 代工型號說明
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.文檔
無文檔
類別
PECVD
上次驗證: 7 天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
138677
晶圓尺寸:
未知
年份:
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
類似上架商品
查看全部
OXFORD
PLASMALAB 133
類別
PECVD
上次驗證: 7 天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
138677
晶圓尺寸:
未知
年份:
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher RIE Reactive Ion Etcher Supports wafer sizes up to 300mm (330mm Platen) RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C Load Lock with turbo pump End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 6 lines including following MFCs: Ar – 100sccm CL – 100sccm BCL3 – 100sccm N2O – 100sccm Windows PC, User friendly interface Chiller, Pump are not included.配置
無配置OEM 代工型號說明
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.文檔
無文檔