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MICROSYSTEMS MICROSYS 200
    描述
    無描述
    配置
    Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
    OEM 代工型號說明
    Plasma Enhanced CVD system (PECVD)
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    無文檔

    MICROSYSTEMS

    MICROSYS 200

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    已驗證

    類別
    PECVD

    上次驗證: 超過60天前

    關鍵商品詳情
    條件:

    Used

    作業狀態:

    未知

    產品編號:

    97600

    晶圓尺寸:

    4"/100mm

    年份:

    未知

    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
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    MICROSYSTEMS MICROSYS 200

    MICROSYSTEMS

    MICROSYS 200

    PECVD
    年份: 0條件: 二手
    上次驗證超過60天前

    MICROSYSTEMS

    MICROSYS 200

    verified-listing-icon
    已驗證
    類別
    PECVD
    上次驗證: 超過60天前
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/eb6f5554ff2445c59ba4a1ecac66a231_a98d6d42000c41e1868d340e6ab13fa81201a_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/a7dad8ae332047688913ba9be4095027_55ace7ffdc6348bbb26b863ef47e085f_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/0b3a9013ef20494ab11c5c358d32232a_3227b227de3a4f37ba9f4ee5d2a36ca21201a_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/157a70c16b514a92bff0673bd9d36271_675890a773c547bb9961d01cf0f442a71201a_mw.jpeg
    關鍵商品詳情
    條件:

    Used

    作業狀態:

    未知

    產品編號:

    97600

    晶圓尺寸:

    4"/100mm

    年份:

    未知

    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    無描述
    配置
    Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
    OEM 代工型號說明
    Plasma Enhanced CVD system (PECVD)
    文檔

    無文檔

    類似上架商品
    查看全部
    MICROSYSTEMS MICROSYS 200

    MICROSYSTEMS

    MICROSYS 200

    PECVD年份: 0條件: 二手上次驗證:超過60天前