描述
Composition: Main Frame, AC Rack, Pump 2 (L/L, Ch.), ILDS Old Gen (HF, LF 2) * Gen Maker not confirmed HF ENI is possible, but currently KF is using RFG5500 Chamber: Chamber interior not confirmed Spindle worm gear (Type 1) modification difficult to modify to Type 2 Heater and all process kits cannot be used配置
OXY_NITOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
已驗證
類別
PECVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
92119
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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查看全部LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
類別
PECVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
92119
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Composition: Main Frame, AC Rack, Pump 2 (L/L, Ch.), ILDS Old Gen (HF, LF 2) * Gen Maker not confirmed HF ENI is possible, but currently KF is using RFG5500 Chamber: Chamber interior not confirmed Spindle worm gear (Type 1) modification difficult to modify to Type 2 Heater and all process kits cannot be used配置
OXY_NITOEM 代工型號說明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.文檔
無文檔