描述
無描述配置
Initial Process: TEOS Available Process: TEOs / SiN / HDPOEM 代工型號說明
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.文檔
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APPLIED MATERIALS (AMAT)
CENTURA DxZ
已驗證
類別
PECVD
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
90689
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
CENTURA DxZ
已驗證
類別
PECVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
90689
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Initial Process: TEOS Available Process: TEOs / SiN / HDPOEM 代工型號說明
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.文檔
無文檔