The Maxus is available on both the Concept One and Concept Two platform.
The Maxus enhanced the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability ofTEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance.

Lam Research is a leading supplier of plasma etch- and single-wafer clean equipment that plays a pivotal role in defining the features and capabilities of next-generation semiconductor devices. With the addition of Novellus' innovative thin-film deposition and surface preparation product lines, the new Lam Research is well-positioned within the industry to support critical technology transitions including 3D structures in advanced logic and NAND memory, as well as the scaling to 450 mm wafers.

CONCEPT TWO "C2" MAXUS

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