Lam Research is a leading supplier of plasma etch- and single-wafer clean equipment that plays a pivotal role in defining the features and capabilities of next-generation semiconductor devices. With the addition of Novellus' innovative thin-film deposition and surface preparation product lines, the new Lam Research is well-positioned within the industry to support critical technology transitions including 3D structures in advanced logic and NAND memory, as well as the scaling to 450 mm wafers.

This enhanced version of the SEQUEL system offers improved throughput performance for both thick and thin dielectric films, while occupying 40% less space than previous versions. It also provides a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber versions.

LAM RESEARCH / NOVELLUS

CONCEPT TWO "C2" SEQUEL-S

SEQUEL EXPRESS is an advanced version of the SEQUEL system designed to deposit Novellus’ CORAL family of low-k dielectric films, as well as all other advanced films required for 0.18-micron and smaller devices. With a throughput in excess of 110 wafers per hour, SEQUEL EXPRESS delivers up to 40 percent higher capital productivity.

CONCEPT TWO "C2" SEQUEL EXPRESS

Enhanced versions of ALTUS system offer improved throughput performance for both thick and thin dielectric films, while occupying 45% less space than previous versions. It also provide a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber version.


CONCEPT TWO "C2" ALTUS-S

The Prism MOCVD Ti-nitride system offers thin barrier solutions for high aspect ratio structures with superior barrier properties, conformality and film stability. This system is used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten.

CONCEPT TWO "C2" PRISM

The Maxus is available on both the Concept One and Concept Two platform.
The Maxus enhanced the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability ofTEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance.

CONCEPT TWO "C2" MAXUS

Novellus introduced the Concept Two-Dual ALTUS tungsten deposition system in 1994. The Dual ALTUS is designed with a dual-chamber configuration that delivers the throughput power to dramatically lower the cost of tungsten deposition. It is considered the best solution in the industry for very high volume 200mm wafer fabs producing state-of-the-art 0.35um semiconductor devices.

CONCEPT TWO "C2" DUAL ALTUS

The NOVELLUS CONCEPT TWO DUAL SEQUEL is a system that uses reactive ion-beam deposition to deposit thick films onto wafers. It has two process chambers that can provide the throughput power of twelve stations, resulting in dramatic improvements in productivity for these types of films. It is designed for high throughput deposition of thick films, such as layers before CMP (chemical-mechanical planarization), and dual layer passivation films. It also offers dual-beam operation for increased wafer-to-wafer uniformity and higher deposition rates, as well as process control capabilities and versatile materials handling for a wide range of applications.

CONCEPT TWO "C2" DUAL SEQUEL

The NOVELLUS CONCEPT TWO SPEED-S is a module used in the Novellus Concept Two Speed system. It consists of two flanges with an eight-inch diameter each, which are equipped with two larger turbomolecular pumps. This configuration allows for high pumping speeds that are necessary to operate at the mTorr pressures required for CVD processes. The SPEED-S is an improved version of SPEED that takes up 40% less space, leading to better throughput densities for customers.

CONCEPT TWO "C2" SPEED-S

Concept Two Titanium Nitride (TiN) system will be used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten (W).

CONCEPT TWO "C2" TiN

The NOVELLUS CONCEPT TWO is a modular, integrated production system that is capable of depositing both dielectric and conductive metal layers by combining one or more processing chambers around a common, automated robotic wafer handler. It was introduced in November 1991.

CONCEPT TWO "C2"

The Concept Two SPEED is a Novellus product that is designed for 200 mm wafers. It features a hemispherical source that is patented and delivers high throughput and manufacturability. The hemispherical source has a single excitation frequency and coil, which makes it simpler and more elegant than other systems that require multiple coils to approach the ion uniformity level of SPEED. The Concept Two SPEED is an HDP CVD system with three chambers that can accommodate the high pumping speeds required to operate at the mTorr pressures necessary for these CVD processes .

CONCEPT TWO "C2" SPEED

Novellus Systems introduced the Concept Two-ALTUS in 1993. It is a chemical vapor deposition reactor system that combines the modular architecture of the Concept Two system with an advanced tungsten CVD process chamber. The system features a new dual loadlock cassette module with full factory automation capability to meet the high throughput requirements of high volume automated eight inch wafer fabs. This dual loadlock cassette handler permits continuous operation of the process chamber with one loadlock, while a second loadlock is simultaneously being loaded or unloaded by the operator in the cleanroom.

CONCEPT TWO "C2" ALTUS

The NOVELLUS CONCEPT TWO SEQUEL is a Reactors / MOCVD system that can produce wafer size of 8 inches. It was initially shipped in a single chamber version targeted at thin dielectric films used in volume 200mm IMD production applications. 

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

LAM RESEARCH / NOVELLUS

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CONCEPT TWO "C2" MAXUS

CONCEPT TWO "C2" DUAL SEQUEL

CONCEPT TWO "C2" DUAL ALTUS

CONCEPT TWO "C2" SPEED-S

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