描述
無描述配置
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 代工型號說明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文檔
無文檔
AIXTRON
AIX 2800 G4 HT
已驗證
類別
MOCVD
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
24142
晶圓尺寸:
未知
年份:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX 2800 G4 HT
已驗證
類別
MOCVD
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
24142
晶圓尺寸:
未知
年份:
2010
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 代工型號說明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.文檔
無文檔