描述
process 1ch配置
ID_HiEnrgOEM 代工型號說明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.文檔
無文檔
類別
Ion Implantation
上次驗證: 12 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
144810
晶圓尺寸:
12"/300mm
年份:
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AXCELIS
NV GSD HE3
類別
Ion Implantation
上次驗證: 12 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
144810
晶圓尺寸:
12"/300mm
年份:
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
process 1ch配置
ID_HiEnrgOEM 代工型號說明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.文檔
無文檔