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APPLIED MATERIALS (AMAT) xR80 LEAP II
    描述
    Already overhauled and installed , no missing part.
    配置
    無配置
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔
    文件圖示

    AMAT- XR80 Leap II -Implanter Check list.pdf

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon

    已驗證

    類別
    High Current

    上次驗證: 昨日

    關鍵商品詳情
    條件:

    Used

    作業狀態:

    Deinstalled

    產品編號:

    73860

    晶圓尺寸:

    8"/200mm

    年份:

    2002

    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    類似上架商品
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    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current
    年份: 2002條件: 二手
    上次驗證昨日
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current
    年份: 0條件: 二手
    上次驗證超過60天前

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon
    已驗證
    類別
    High Current
    上次驗證: 昨日
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    關鍵商品詳情
    條件:

    Used

    作業狀態:

    Deinstalled

    產品編號:

    73860

    晶圓尺寸:

    8"/200mm

    年份:

    2002

    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    Already overhauled and installed , no missing part.
    配置
    無配置
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔
    文件圖示

    AMAT- XR80 Leap II -Implanter Check list.pdf

    類似上架商品
    查看全部
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current年份: 2002條件: 二手上次驗證:昨日
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current年份: 0條件: 二手上次驗證:超過60天前