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APPLIED MATERIALS (AMAT) xR80 LEAP II
    描述
    Already overhauled and installed , no missing part.
    配置
    無配置
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔
    類別
    High Current

    上次驗證: 超過60天前

    關鍵商品詳情

    條件:

    Used


    作業狀態:

    Deinstalled


    產品編號:

    73860


    晶圓尺寸:

    8"/200mm


    年份:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon
    已驗證
    類別
    High Current
    上次驗證: 超過60天前
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    關鍵商品詳情

    條件:

    Used


    作業狀態:

    Deinstalled


    產品編號:

    73860


    晶圓尺寸:

    8"/200mm


    年份:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    Already overhauled and installed , no missing part.
    配置
    無配置
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔