描述
High-Current Ion Implanter配置
Ancillary: Abatement Unit, Process Gases: Ar, AsH3, BF3, N2OEM 代工型號說明
The xR LEAP is the industry’s first sub-keV ion implanter that utilizes patented differential lens technology to achieve beam currents as low as 200eV. This paves the way for ultra-shallow junction development required in advanced 0.18µm and 0.13µm devices. The enhancements built into the xRS Series implanters result in higher throughput, with 235 wafers per hour for 200mm and 220 wafers per hour for 300mm, and lower cost of ownership.文檔
無文檔
類別
High Current
上次驗證: 6 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
142524
晶圓尺寸:
8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
xR LEAP
類別
High Current
上次驗證: 6 天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
142524
晶圓尺寸:
8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
High-Current Ion Implanter配置
Ancillary: Abatement Unit, Process Gases: Ar, AsH3, BF3, N2OEM 代工型號說明
The xR LEAP is the industry’s first sub-keV ion implanter that utilizes patented differential lens technology to achieve beam currents as low as 200eV. This paves the way for ultra-shallow junction development required in advanced 0.18µm and 0.13µm devices. The enhancements built into the xRS Series implanters result in higher throughput, with 235 wafers per hour for 200mm and 220 wafers per hour for 300mm, and lower cost of ownership.文檔
無文檔