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APPLIED MATERIALS (AMAT) QUANTUM LEAP
    描述
    LOW ENERGY IMPLANT
    配置
    無配置
    OEM 代工型號說明
    "Designed for the emerging 300mm market, Quantum utilizes the differential lens technology of the xRLEAP system. Enhanced beam optics further improve the low-energy productivity over the xRLEAP system. High beam currents combined with fast auto-tune capability make Quantum the most effective ion implanter for 130nm and below applications in the industry. New technology for energy control ensures excellent energy accuracy and ultra-low energy implants to a remarkable ±7.5 volts. Quantum is a production-proven platform capable of performing conductive doping for several device generations into the future. The Quantum series of implanters are used for ""conductive"" implant applications traditionally performed by high-current implant systems. The Quantum series includes the Quantum 80 and 120 (2 keV to 80/120 keV) and the Quantum LEAP system that extends ultra-low-energy performance to 200eV. All Quantum systems use a small-footprint platform that bridges 200mm and 300mm wafer sizes. The system's extremely short beam path minimizes beam ""blow up'' and energy contamination with new technology that ensures energy accuracy and control to ±0.5% for ultra-low energy implants. Although the Quantum beamline excels at low energy implantation, the system also provides excellent performance in mid-energy (10-80keV) implants. Its high current levels give high production throughput and lower cost of ownership. The market-leading Quantum LEAP system has been rapidly accepted by chipmakers in all regions for ultra-shallow junction formation, enabling smaller transistors and higher device speeds
    文檔

    無文檔

    類別
    High Current

    上次驗證: 超過60天前

    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    128045


    晶圓尺寸:

    8"/200mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available

    APPLIED MATERIALS (AMAT)

    QUANTUM LEAP

    verified-listing-icon
    已驗證
    類別
    High Current
    上次驗證: 超過60天前
    listing-photo-82b0b112b6e1476da98b9a9f0bd4410b-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    128045


    晶圓尺寸:

    8"/200mm


    年份:

    未知


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    LOW ENERGY IMPLANT
    配置
    無配置
    OEM 代工型號說明
    "Designed for the emerging 300mm market, Quantum utilizes the differential lens technology of the xRLEAP system. Enhanced beam optics further improve the low-energy productivity over the xRLEAP system. High beam currents combined with fast auto-tune capability make Quantum the most effective ion implanter for 130nm and below applications in the industry. New technology for energy control ensures excellent energy accuracy and ultra-low energy implants to a remarkable ±7.5 volts. Quantum is a production-proven platform capable of performing conductive doping for several device generations into the future. The Quantum series of implanters are used for ""conductive"" implant applications traditionally performed by high-current implant systems. The Quantum series includes the Quantum 80 and 120 (2 keV to 80/120 keV) and the Quantum LEAP system that extends ultra-low-energy performance to 200eV. All Quantum systems use a small-footprint platform that bridges 200mm and 300mm wafer sizes. The system's extremely short beam path minimizes beam ""blow up'' and energy contamination with new technology that ensures energy accuracy and control to ±0.5% for ultra-low energy implants. Although the Quantum beamline excels at low energy implantation, the system also provides excellent performance in mid-energy (10-80keV) implants. Its high current levels give high production throughput and lower cost of ownership. The market-leading Quantum LEAP system has been rapidly accepted by chipmakers in all regions for ultra-shallow junction formation, enabling smaller transistors and higher device speeds
    文檔

    無文檔