描述
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production配置
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 代工型號說明
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor文檔
無文檔
OXFORD
CrystalFlex
已驗證
類別
Epitaxial deposition (EPI)
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
89778
晶圓尺寸:
6"/150mm
年份:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
OXFORD
CrystalFlex
類別
Epitaxial deposition (EPI)
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
89778
晶圓尺寸:
6"/150mm
年份:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production配置
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 代工型號說明
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor文檔
無文檔