跳到主要內容
We value your privacy

We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. 閱讀詳情

Moov logo

Moov Icon
APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
  • APPLIED MATERIALS (AMAT) CENTURA ACP EPI
描述
EPI SiGe 300MM RPS
配置
無配置
OEM 代工型號說明
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.
文檔

無文檔

類別
Epitaxial deposition (EPI)

上次驗證: 超過60天前

關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

128058


晶圓尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

APPLIED MATERIALS (AMAT)

CENTURA ACP EPI

verified-listing-icon
已驗證
類別
Epitaxial deposition (EPI)
上次驗證: 超過60天前
listing-photo-0d1f2d2cca1d4358884fc13a53f788dd-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

128058


晶圓尺寸:

12"/300mm


年份:

未知


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
EPI SiGe 300MM RPS
配置
無配置
OEM 代工型號說明
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.
文檔

無文檔