描述

High density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity The Ulvac NE950-EX is a batch ICP etcher designed to anisotropically etch most any thin film used in the semi, compound semi, solar, hard disc and photonic industries. Utilizing its patented ISM (Inductive Super Magnet) design to create a high density plasma, a cathode powered by a 12.56 MHz gen/match for biasing, and process gasses that include chlorinated and fluorinated chemistries, it can etch most films. Partial list of materials it can etch: Metals and noble metals (ex. Al, Ti, W, WSi, TiW, Ta, Cr, Mo, Ir, Au, Pt, Cu), metal oxides, dielectrics, polyimide, BCB, poly Si, compound semiconductors (GaN, GaAs, AlGaAs, InGaAs, InGaP, InP, SiC, etc), TCOs (ITO, and AZO, etc.) and tough to etch materials like piezo electrics (PZT, BaTiO3, LiNbO3), ferroelectric materials (BST, SBT), Ceramics (Al2O3 including sapphire, ZnO2) and DLC. Fully Automatic: This tool is fully automatic and is configured for batch etching of 150 mm wafers. Two cassettes of 6- inch wafers are loaded into the front end along with two 330 mm wafer carriers that hold 3 x 150mm wafers each. The atm robot aligns the wafers and loads them onto the carriers via a Bernoulli handling mechanism. The carrier is then aligned and transfered into the transfer chamber. The vacuum robot in the L/L picks up the carrier and transfers it to the process chamber. Processed wafers residing on the carrier are then returned to the L/L and then back into transfer chamber where the atm robot returns the individual wafers back into the cassette.