描述
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity配置
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ULVAC
NE-950EX
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
128838
晶圓尺寸:
6"/150mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity配置
無配置OEM 代工型號說明
未提供文檔
無文檔