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描述
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface配置
無配置OEM 代工型號說明
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".文檔
無文檔
TRION
MINILOCK
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
12010
晶圓尺寸:
8"/200mm
年份:
1995
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描述
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface配置
無配置OEM 代工型號說明
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".文檔
無文檔