描述
無描述配置
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 代工型號說明
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.文檔
無文檔
STS
HRM
已驗證
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
110058
晶圓尺寸:
6"/150mm
年份:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
HRM
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
110058
晶圓尺寸:
6"/150mm
年份:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 代工型號說明
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.文檔
無文檔