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AP&S AeroSonic
  • AP&S AeroSonic
  • AP&S AeroSonic
  • AP&S AeroSonic
描述
無描述
配置
無配置
OEM 代工型號說明
The wide process window of the AeroSonic dryer offers the possibility of tailored recipes for various substrate materials such as Si, SiO2, quartz and GaAs, regardless of hydrophilic or hydrophobic surfaces. There is no limitation in wafer size - it is applicable to all wafer diameters used today. It’s even possible to dry different wafers or substrates sizes simultaneously within one process bath.
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已驗證

類別
Dry / Plasma Etch

上次驗證: 超過60天前

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條件:

Used


作業狀態:

未知


產品編號:

78693


晶圓尺寸:

未知


年份:

未知


Have Additional Questions?
Logistics Support
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Refurbishment Services
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AP&S

AeroSonic

verified-listing-icon
已驗證
類別
Dry / Plasma Etch
上次驗證: 超過60天前
listing-photo-0bda765479d747e0b7f978c0e6ab1d41-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1148/0bda765479d747e0b7f978c0e6ab1d41/a4e93c75caf545339e39965b24ef698e_0b110f4ac6c84310a2903967f4aa0abe1201a_mw.jpeg
listing-photo-0bda765479d747e0b7f978c0e6ab1d41-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1148/0bda765479d747e0b7f978c0e6ab1d41/83e5e4ab22d14717952621eac5ecdb03_fb9de1dc2db54064b0e3cd8a9d6522181201a_mw.jpeg
listing-photo-0bda765479d747e0b7f978c0e6ab1d41-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1148/0bda765479d747e0b7f978c0e6ab1d41/3043cb6462bd46e99175c39ae851cf5f_e474bac93a3745ec9afd0f7c5788c35a1201a_mw.jpeg
關鍵商品詳情

條件:

Used


作業狀態:

未知


產品編號:

78693


晶圓尺寸:

未知


年份:

未知


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述
配置
無配置
OEM 代工型號說明
The wide process window of the AeroSonic dryer offers the possibility of tailored recipes for various substrate materials such as Si, SiO2, quartz and GaAs, regardless of hydrophilic or hydrophobic surfaces. There is no limitation in wafer size - it is applicable to all wafer diameters used today. It’s even possible to dry different wafers or substrates sizes simultaneously within one process bath.
文檔

無文檔