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APPLIED MATERIALS (AMAT) P5000 ETCH
    描述
    無描述
    配置
    無配置
    OEM 代工型號說明
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    文檔

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon

    已驗證

    類別
    Dry / Plasma Etch

    上次驗證: 22 天前

    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    114672


    晶圓尺寸:

    6"/150mm


    年份:

    1990


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
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    APPLIED MATERIALS (AMAT) P5000 ETCH

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    Dry / Plasma Etch
    年份: 1990條件: 二手
    上次驗證22 天前

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon
    已驗證
    類別
    Dry / Plasma Etch
    上次驗證: 22 天前
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    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    114672


    晶圓尺寸:

    6"/150mm


    年份:

    1990


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    無描述
    配置
    無配置
    OEM 代工型號說明
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    文檔
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    APPLIED MATERIALS (AMAT) P5000 ETCH

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    Dry / Plasma Etch年份: 1990條件: 二手上次驗證:22 天前
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