描述
P-5000 Mark II MxP Poly配置
Polysilicon Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP Poly ESC: Polymide Gases Used: SF6, HE, CHF3, AR, N2, CF4, O2, HBR, CL2, HE/O2 MFCs: 26 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 2 DS80/250, 2-IQDP80/WSU151 Chillers: 3-Neslab 150, 1-AMAT-0OEM 代工型號說明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文檔
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類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
125400
晶圓尺寸:
6"/150mm, 8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
P5000 ETCH
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
125400
晶圓尺寸:
6"/150mm, 8"/200mm
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
P-5000 Mark II MxP Poly配置
Polysilicon Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP Poly ESC: Polymide Gases Used: SF6, HE, CHF3, AR, N2, CF4, O2, HBR, CL2, HE/O2 MFCs: 26 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 2 DS80/250, 2-IQDP80/WSU151 Chillers: 3-Neslab 150, 1-AMAT-0OEM 代工型號說明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.文檔
無文檔