描述
Defect_Inspection(BF)配置
無配置OEM 代工型號說明
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.文檔
無文檔
類別
Defect Inspection
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
120690
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
UVISION 6
類別
Defect Inspection
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
120690
晶圓尺寸:
未知
年份:
未知
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Defect_Inspection(BF)配置
無配置OEM 代工型號說明
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.文檔
無文檔