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描述
無描述配置
THROUGHPUT -Measured using AMAT standard wafer and throughput BKMs: On AMAT reference wafer. - Wafer Overhead (In pipeline mode): 90 s - Defect throughput (single wafer): 500 DPH ( Option for 600 DPH ) - Wafer throughput (50 defects/wafer): 8 wafers/hr - Wafer breakage: More then 10000 runs REDETECTION Bare: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% Pattern: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% AUTOMATIC DEFECT CLASSIFICATION - Classification Global Accuracy: 80% - Classification Reproducibility: 90% BARE WAFER REVIEW AND CLASSIFICATION - Throughput for review and ADC: 6 wafer/hour (20 defects/wafer) - Throughput for review and material ID: 160 defs/hr (Typical Acquisition Time): 10s RECIPE PROGRAMMING Time to New ADR Recipe (existing layer, New product): 20 min - Time to New ADC Recipe: 2.0 Hours Defect files type: All SEM - Resolution: 4 nm @ 1 kV (0° tilt) - Accelerating Voltage: 500V – 15kV - Magnification: x500-x200,000 - Multi perspective SEM image: Yes - High Aspect Ratio: N/A - Auto focus: Yes IMAGE STABILITY - Gun Life Time: >1 Year - Gun Bake Out Frequency: 6-12 Months - Prob current monitor system: Yes OPTICAL MICROSCOPE Color - Magnification: X2.5, X20, X100 STAGE - X, Y Coordinates Accuracy (@ 0° tilt): +1.5μm - Tilt (3 Discrete positions): 0°, 15°, 45o Discrete tilting - Tilt Position Exchange Time: 35 s - Tilt Eccentricity: +10 μm - Rotating: 0°, 45°, 90o , 180o Discrete rotating API & VOLTAGE CONTRAST -Voltage Contrast Redetection and ADC: Redetection rate > 90% for filled structure and structures with Aspect Ratio up to 1:3 ADC allows classification of Voltage Contrast according to gray level. -API (Automatic Process Control): +/-1.5umAll relevant ADR and ADC specifications apply to the API application. EDX -Typical Acquisition Time: 10 s - Resolution: Mn 138.4 eV +2.5 - Resolution: Si 91 eV +2.0 - Resolution: F 81.5 eV +2.0 CLEANLINESS - Class 1 clean room compatible - Front Side Wafer: 0.013 PWP/cm² @> 0.12 μm - Back Side Wafer: 0.14 PWP/cm2@> 1 mm IMAGE STORAGE: More then 10,000 - Image format: TIF HANDLING YIELD: 99.99% UPTIME: 0-6 months after acceptance: 93%, 6 months plus: 95% MTBF: 0-6 months after acceptance: 750hr, 6 months plus: 1000hr MTBA: 0-6 months after acceptance: 60hr, 6 months plus: 100hr PM: 3.75 hr/ week MTTR: 6hrOEM 代工型號說明
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類別
Defect Inspection
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
113459
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
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Transaction Insured by Moov
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APPLIED MATERIALS (AMAT)
SEMVISION CX 300
類別
Defect Inspection
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
113459
晶圓尺寸:
未知
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
THROUGHPUT -Measured using AMAT standard wafer and throughput BKMs: On AMAT reference wafer. - Wafer Overhead (In pipeline mode): 90 s - Defect throughput (single wafer): 500 DPH ( Option for 600 DPH ) - Wafer throughput (50 defects/wafer): 8 wafers/hr - Wafer breakage: More then 10000 runs REDETECTION Bare: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% Pattern: - Redetection success rate (defects > 0.15 mm): 90% - Redetection Reproducibility: 95% AUTOMATIC DEFECT CLASSIFICATION - Classification Global Accuracy: 80% - Classification Reproducibility: 90% BARE WAFER REVIEW AND CLASSIFICATION - Throughput for review and ADC: 6 wafer/hour (20 defects/wafer) - Throughput for review and material ID: 160 defs/hr (Typical Acquisition Time): 10s RECIPE PROGRAMMING Time to New ADR Recipe (existing layer, New product): 20 min - Time to New ADC Recipe: 2.0 Hours Defect files type: All SEM - Resolution: 4 nm @ 1 kV (0° tilt) - Accelerating Voltage: 500V – 15kV - Magnification: x500-x200,000 - Multi perspective SEM image: Yes - High Aspect Ratio: N/A - Auto focus: Yes IMAGE STABILITY - Gun Life Time: >1 Year - Gun Bake Out Frequency: 6-12 Months - Prob current monitor system: Yes OPTICAL MICROSCOPE Color - Magnification: X2.5, X20, X100 STAGE - X, Y Coordinates Accuracy (@ 0° tilt): +1.5μm - Tilt (3 Discrete positions): 0°, 15°, 45o Discrete tilting - Tilt Position Exchange Time: 35 s - Tilt Eccentricity: +10 μm - Rotating: 0°, 45°, 90o , 180o Discrete rotating API & VOLTAGE CONTRAST -Voltage Contrast Redetection and ADC: Redetection rate > 90% for filled structure and structures with Aspect Ratio up to 1:3 ADC allows classification of Voltage Contrast according to gray level. -API (Automatic Process Control): +/-1.5umAll relevant ADR and ADC specifications apply to the API application. EDX -Typical Acquisition Time: 10 s - Resolution: Mn 138.4 eV +2.5 - Resolution: Si 91 eV +2.0 - Resolution: F 81.5 eV +2.0 CLEANLINESS - Class 1 clean room compatible - Front Side Wafer: 0.013 PWP/cm² @> 0.12 μm - Back Side Wafer: 0.14 PWP/cm2@> 1 mm IMAGE STORAGE: More then 10,000 - Image format: TIF HANDLING YIELD: 99.99% UPTIME: 0-6 months after acceptance: 93%, 6 months plus: 95% MTBF: 0-6 months after acceptance: 750hr, 6 months plus: 1000hr MTBA: 0-6 months after acceptance: 60hr, 6 months plus: 100hr PM: 3.75 hr/ week MTTR: 6hrOEM 代工型號說明
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